Chen X, Bhola B, Huang Y, Ho S T
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston 60208, Illinois, USA.
Opt Express. 2010 Aug 2;18(16):17220-38. doi: 10.1364/OE.18.017220.
Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.
使用多能级多热电子有限差分时域（MLMTE-FDTD）模拟器研究了半导体增益介质与受限等离激元极化激元之间的相互作用。我们研究了在填充有半导体增益介质的等离激元金属-半导体-金属（MSM）波导中传播的波的放大，并获得了实现净光学增益所需的条件。MSM增益波导用于形成有效模式体积为0.0071立方微米的等离激元半导体纳米环激光器（PSNRL），该体积比已证明的最小集成光子晶体基激光腔小约一个数量级。模拟显示，对于外径为300 nm、环宽为80 nm的环形腔，激射阈值电流密度为1kA/cm2。在典型的III-V族半导体中可以实际实现这种电流密度，这表明了所提出的PSNRL结构的实验可行性。
