Barbier P R, Moddel G
Appl Opt. 1992 Jul 10;31(20):3898-907. doi: 10.1364/AO.31.003898.
We discuss the use of hydrogenated amorphous silicon (a-Si:H) photodiodes as photosensors in high-performance optically addressed spatial light modulators (OASLM's). To find the performance limitations that result from the photodiode exclusively, a pseudo-OASLM is constructed; it is composed of an a-Si:H photodiode in series with a discrete capacitor and resistor to simulate an electrically ideal liquid-crystal modulator. The a-Si:H photodiode conduction regimes are identified, and the maximum and minimum frame rates that may be attained with an a-Si:H photodiode-driven OASLM are determined to be ~ 100 kHz and ~ 0 Hz, respectively. Optimum performance is obtained when the photodiode capacitance is equal to the light modulator capacitance.
我们讨论了将氢化非晶硅（a-Si:H）光电二极管用作高性能光寻址空间光调制器（OASLM）中的光电传感器。为了专门找出由光电二极管导致的性能限制，构建了一个伪OASLM；它由一个与离散电容器和电阻器串联的a-Si:H光电二极管组成，以模拟电理想液晶调制器。确定了a-Si:H光电二极管的传导模式，并且由a-Si:H光电二极管驱动的OASLM可达到的最大和最小帧率分别确定为100 kHz和0 Hz。当光电二极管电容等于光调制器电容时可获得最佳性能。
