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铍表面的层状和取向分辨键弛豫以及电荷和能量的量子捕获。

Layer and orientation resolved bond relaxation and quantum entrapment of charge and energy at Be surfaces.

机构信息

School of Information and Electronic Engineering, Hunan University of Science and Technology, Xiangtan 411201, China.

出版信息

Phys Chem Chem Phys. 2010 Oct 21;12(39):12753-9. doi: 10.1039/c0cp00088d. Epub 2010 Aug 24.

Abstract

The chemistry and physics of under-coordination at a surface, which determines the process of catalytic reactions and growth nucleation, is indeed fascinating. However, extracting quantitative information regarding the coordination-resolved surface relaxation, binding energy, and the energetic behavior of electrons localized in the surface skin from photoelectron emission has long been a great challenge, although the surface-induced core level shifts of materials have been intensively investigated. Here we show that a combination of the theories of tight binding and bond order-length-strength (BOLS) correlation [C. Q. Sun, Prog. Solid State Chem., 2007, 35, 1-159], and X-ray photoelectron spectroscopy (XPS) has enabled us to derive quantitative information, by analyzing the Be 1s energy shift of Be(0001), (1010), and (1120) surfaces, for demonstration, regarding: (i) the 1s energy level of an isolated Be atom (106.416 ± 0.004 eV) and its bulk shift (4.694 eV); (ii) the layer- and orientation-resolved effective atomic coordination (3.5, 3.1, 2.98 for the first layer of the three respective orientations), local bond strain (up to 19%), charge density (133%), quantum trap depth (110%), binding energy density (230%), and atomic cohesive energy (70%) of Be surface skins up to four atomic layers in depth. It is affirmed that the shorter and stronger bonds between under-coordinated atoms perturb the Hamiltonian and hence the fascinating localization and densification of surface electrons. The developed approach can be applied to other low-dimensional systems containing a high fraction of under-coordinated atoms such as adatoms, atomic defects, terrace edges, and nanostructures to gain quantitative information and deeper insight into their properties and processes due to the effect of coordination imperfection.

摘要

表面欠配位的化学和物理性质决定了催化反应和生长成核的过程,这确实令人着迷。然而,从光电子发射中提取关于配位分辨表面弛豫、结合能以及局域在表面表层中的电子的能量行为的定量信息一直是一个巨大的挑战,尽管已经对材料的表面诱导芯能级位移进行了深入研究。在这里,我们展示了紧束缚理论和键序-键长-键强(BOLS)相关性理论[C.Q.Sun, Prog.Solid State Chem., 2007, 35, 1-159]与 X 射线光电子能谱(XPS)的结合,通过分析 Be(0001)、(1010)和(1120)表面的 Be 1s 能量位移,为演示提供了定量信息,包括:(i) 孤立 Be 原子的 1s 能级(106.416±0.004 eV)及其体相位移(4.694 eV);(ii) 层和取向分辨的有效原子配位(三个取向的第一层分别为 3.5、3.1 和 2.98)、局域键应变(高达 19%)、电荷密度(133%)、量子阱深度(110%)、结合能密度(230%)和原子内聚能(70%),直至四个原子层深度的 Be 表面表层。证实了欠配位原子之间较短且较强的键会干扰哈密顿量,从而导致表面电子的迷人局域化和密集化。所开发的方法可以应用于其他包含高分数欠配位原子的低维系统,如 adatoms、原子缺陷、平台边缘和纳米结构,以获得定量信息和对其性质和过程的更深入了解,这是由于配位不完美的影响。

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