Department of Physics and The William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China.
ACS Nano. 2010 Oct 26;4(10):5559-64. doi: 10.1021/nn100465s.
Si nanowires coated with Ni showed interesting structural transformation behaviors as observed by in situ transmission electron microscopy. Owing to the presence of the native oxide on Si nanowire surfaces, the Ni thin shells initially segregated into nanosized droplets on the oxide surfaces. The native oxide shells protected the Si cores from reacting with Ni at temperatures below 1350 °C. Ni started the reaction with Si nanowires preferentially at the defects or bending regions of the nanowires. Because the reaction temperature was sufficiently high, the structural transformation was extremely fast and completed within 0.1 s. The resulting nanowires were single crystalline NiSi(2), the most desirable Ni silicide structure for potential applications. Nanowire junctions of NiSi(2)/Si and nanowire-nanotube junctions of NiSi(2)/SiC have been obtained upon further annealing.
用镍涂覆的硅纳米线通过原位透射电子显微镜观察到了有趣的结构转变行为。由于硅纳米线表面存在本征氧化物,因此镍薄壳最初在氧化物表面上分离成纳米尺寸的液滴。本征氧化硅壳在 1350°C 以下的温度下保护硅核不与镍反应。镍优先在纳米线的缺陷或弯曲区域与硅纳米线开始反应。由于反应温度足够高,结构转变非常迅速,在 0.1 秒内完成。得到的纳米线是单晶 NiSi(2),这是潜在应用中最理想的镍硅化物结构。进一步退火后,得到了 NiSi(2)/Si 的纳米线结和 NiSi(2)/SiC 的纳米线-纳米管结。