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研究氢气和硫化氢在掺铌和掺铜钯表面的吸附。

Investigation of H2 and H2S adsorption on niobium- and copper-doped palladium surfaces.

机构信息

Department of Energy Resources Engineering, School of Earth Sciences, Stanford University, Green Earth Sciences 065, 367 Panama Street, Stanford, California 94305, USA.

出版信息

J Phys Chem B. 2010 Oct 14;114(40):12851-8. doi: 10.1021/jp105469c.

Abstract

Alloying or doping Pd may be an option for overcoming sulfur poisoning. The current investigation probes the mechanism associated with sulfur binding to determine if Nb and Cu are appropriate doping metals. In this study, the effect of doping Pd with Cu or Nb on the binding strength of H(2) and H(2)S was investigated using plane-wave density functional theory-based electronic structure calculations to determine mechanisms of adsorption. Results of this work indicate that for pure Pd and Pd-doped surfaces, H(2) dissociates with the H atoms most stable on the fcc-fcc site. The overall d-band centers calculated for H(2) adsorption at the fcc-fcc site for the pure and doped-Pd surfaces indicate that the H(2) adsorption strength trend is Pd > Cu > Nb. Regarding H(2)S adsorption on Pd and Pd-doped surfaces, it was found that Cu has a lower affinity for H(2)S compared to Pd and Nb. The calculation of the local density of states of the s-, p-, and d-orbitals of the adsorbate-surface complex reveals an increase in the occupation of s-and p-states of the adsorbate and d-states of the dopant metals upon adsorption. In addition, the H(2)S binding trend is found to be Cu < Pd < Nb, with the doped-Cu surfaces exhibiting the weakest binding and doped-Nb surfaces the strongest binding. Geometry comparisons of each H(2)S-adsorbed complex shows that the hydrogen atoms are located closest to the surface in the case of Nb, indicating that the strong H-surface interaction leads to the enhanced adsorption behavior, rather than the S-surface interaction; in fact, the sulfur atom is located furthest from the surface doped with Nb.

摘要

合金化或掺杂 Pd 可能是克服硫中毒的一种选择。目前的研究探讨了与硫结合相关的机制,以确定 Nb 和 Cu 是否是合适的掺杂金属。在这项研究中,使用基于平面波密度泛函理论的电子结构计算研究了 Cu 或 Nb 掺杂 Pd 对 H(2)和 H(2)S 结合强度的影响,以确定吸附机制。这项工作的结果表明,对于纯 Pd 和 Pd 掺杂表面,H(2)在 fcc-fcc 位上最稳定的 H 原子上发生解离。对于纯 Pd 和掺杂-Pd 表面上 fcc-fcc 位吸附 H(2)的整体 d 带中心计算表明,H(2)吸附强度趋势为 Pd > Cu > Nb。关于 H(2)S 在 Pd 和 Pd 掺杂表面上的吸附,发现 Cu 对 H(2)S 的亲和力低于 Pd 和 Nb。吸附体-表面配合物的 s、p 和 d 轨道的局域态密度计算表明,吸附体的 s 和 p 态以及掺杂金属的 d 态的占据增加。此外,发现 H(2)S 的结合趋势为 Cu < Pd < Nb,其中掺杂-Cu 表面表现出最弱的结合,掺杂-Nb 表面表现出最强的结合。每个 H(2)S 吸附配合物的几何比较表明,在 Nb 的情况下,氢原子最靠近表面,表明强 H-表面相互作用导致吸附行为增强,而不是 S-表面相互作用;实际上,硫原子位于掺杂 Nb 的表面最远。

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