College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, Arizona 85721, USA.
Opt Lett. 2010 Sep 15;35(18):3060-2. doi: 10.1364/OL.35.003060.
We report on the development of a gain-coupled class A semiconductor laser for dual-wavelength generation via optical switching. A vertical external cavity surface emitting laser (VECSEL) structure is used, because it provides a flexible platform for high-power, high-brightness output in the near-IR and visible ranges. For the first time (to our knowledge), two VECSEL cavities sharing a common gain region are studied. Because the cavities are in competition for common carriers, birefringent filters in the external cavity control the laser cavity thresholds; this configuration demonstrates the possibility of switching between the two cavities, which can operate at different wavelengths. However, in this Letter we also show, numerically and experimentally, that with the consideration of spontaneous emission, it is possible to maintain simultaneous lasing in each cavity at a different wavelength.
我们报告了一种通过光开关实现双波长产生的增益耦合 A 类半导体激光器的发展。使用垂直外腔面发射激光器 (VECSEL) 结构，因为它为近红外和可见范围内的高功率、高亮度输出提供了灵活的平台。这是首次（据我们所知）研究了共享公共增益区的两个 VECSEL 腔。由于这些腔在竞争公共载流子，因此外部腔中的双折射滤波器控制激光腔的阈值；这种配置展示了在不同波长之间切换的可能性。然而，在本信中，我们还数值和实验证明，考虑到自发发射，有可能在每个腔中以不同波长维持同时激光。
