Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, USA.
Phys Rev Lett. 2010 Sep 17;105(12):125504. doi: 10.1103/PhysRevLett.105.125504.
Using electron correlograph analysis we show that coherent nanodiffraction patterns from sputtered amorphous silicon indicate that there is more local crystallinity in unannealed amorphous silicon than was previously suspected. By comparing with simulations for various models we show that within a typical unannealed amorphous silicon film a substantial volume fraction (>50%) is topologically crystalline with correlation lengths up to 2 nm. Electron correlograph analysis is a variant of the fluctuation electron microscopy technique and its sensitivity to local crystalline ordering is derived from its sensitivity to four-body correlations.
利用电子相关图分析，我们表明溅射非晶硅的相干纳米衍射图案表明未经退火的非晶硅比以前怀疑的具有更多的局部结晶度。通过与各种模型的模拟进行比较，我们表明在典型的未退火非晶硅膜中，相当大的体积分数（> 50%）具有拓扑结晶性，相关长度高达 2nm。电子相关图分析是波动电子显微镜技术的一种变体，其对局部结晶有序性的敏感性来自于对四体相关的敏感性。
