在石墨烯上沉积高质量的 HfO2 以及远程氧化物声子散射的影响。
Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering.
机构信息
Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
出版信息
Phys Rev Lett. 2010 Sep 17;105(12):126601. doi: 10.1103/PhysRevLett.105.126601. Epub 2010 Sep 16.
We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20,000 cm2/V s at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300 K, surface phonon modes of the HfO2 film centered at 54 meV limit the mobility to approximately 20,000 cm2/V s.
我们展示了高质量介电 HfO2 薄膜在石墨烯上的原子层沉积，并确定了双氧化物结构中远程氧化物表面声子散射的大小。在这些 HfO2 覆盖的石墨烯样品中，载流子迁移率在低温下达到 20,000 cm2/V s。从 SiO2 衬底和 HfO2 覆盖层中的表面光学声子对电阻率的不同贡献被隔离。在 300 K 时，HfO2 薄膜的表面声子模式集中在 54 meV，限制了迁移率约为 20,000 cm2/V s。
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