Anomalous Hall effect in disordered multiband metals.

We present a microscopic theory of the anomalous Hall effect (AHE) in metallic multiband ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian disorder, the AHE is expressed solely in terms of the material's electronic band structure. Our theory handles systematically the interband-scattering coherence effects. We demonstrate the method in the 2D Rashba and 3D ferromagnetic (III,Mn)V semiconductor models. Our formalism is directly amenable to ab initio treatments for a wide range of ferromagnetic metals.