Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA.
Phys Rev Lett. 2010 Jul 16;105(3):036601. doi: 10.1103/PhysRevLett.105.036601. Epub 2010 Jul 13.
We present a microscopic theory of the anomalous Hall effect (AHE) in metallic multiband ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian disorder, the AHE is expressed solely in terms of the material's electronic band structure. Our theory handles systematically the interband-scattering coherence effects. We demonstrate the method in the 2D Rashba and 3D ferromagnetic (III,Mn)V semiconductor models. Our formalism is directly amenable to ab initio treatments for a wide range of ferromagnetic metals.
我们提出了一个金属多带铁磁体反常霍尔效应（AHE）的微观理论，该理论解释了所有与散射无关的贡献，即本征和所谓的侧跃。对于高斯无序模型，AHE 仅用材料的电子能带结构来表示。我们的理论系统地处理了带间散射相干效应。我们在二维 Rashba 和三维铁磁（III，Mn）V 半导体模型中演示了该方法。我们的形式体系直接适用于广泛的铁磁金属的从头算处理。
