Jungwirth T, Niu Qian, MacDonald A H
Department of Physics, The University of Texas, Austin, Texas 78712, USA.
Phys Rev Lett. 2002 May 20;88(20):207208. doi: 10.1103/PhysRevLett.88.207208. Epub 2002 May 6.
We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.
我们提出了一种关于铁磁（III，Mn）V半导体中反常霍尔效应的理论。我们的理论将均匀铁磁体的反常霍尔电导与准粒子波函数在自旋分裂费米面上遍历闭合路径时所获得的贝里相位联系起来。我们的理论与（In，Mn）As和（Ga，Mn）As系统中的实验数据之间的定量一致性表明，这种对反常霍尔电导率的无序无关贡献在稀磁半导体中占主导地位。在理解巡游铁磁体中反常霍尔效应起源的长期努力中，该模型对（III，Mn）V材料的成功是前所未有的。
