Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), Bellaterra, Spain.
Nanotechnology. 2010 Nov 19;21(46):465601. doi: 10.1088/0957-4484/21/46/465601. Epub 2010 Oct 25.
We report on the formation of self-organized rows of pits in highly epitaxial La(2/3)Sr(1/3)MnO(3) thin films on top of substrates having different structural misfits by rf magnetron sputtering. The best-defined pits form in coherently grown films at a low misfit irrespective of its nature (tensile or compressive stress). It is also found that the pit rows align along the step edges, which indicates in-phase growth instability with the step edges, irrespective of the misfit. However, out-of-phase pit rows are also found when the terrace width increases due to a decrease of the miscut angle. Pit's volume scales inversely with the lattice mismatch suggesting that structural strain alone does not favor the formation of pits. The formation of pits is analyzed within a thermodynamic model.
我们通过射频磁控溅射在具有不同结构失配的衬底上报告了高度外延 La(2/3)Sr(1/3)MnO(3)薄膜中自组织的坑列的形成。在低失配下，在相干生长的薄膜中形成了最好定义的坑，无论其性质（拉伸或压缩应力）如何。还发现坑列沿着台阶边缘对齐，这表明与台阶边缘的同相生长不稳定性，而与失配无关。然而，当由于斜切角减小而使平台宽度增加时，也会发现非同相的坑列。坑的体积与晶格失配成反比，表明结构应变本身并不有利于坑的形成。坑的形成在热力学模型中进行了分析。
