Centre for Nanoscale Science and Technology, School of Chemical and Physical Sciences, Flinders University, Sturt Road, Bedford Park, Adelaide, South Australia 5042.
Langmuir. 2010 Dec 7;26(23):18468-75. doi: 10.1021/la103497f. Epub 2010 Oct 26.
Two approaches to producing gradients of vertically aligned single-walled carbon nanotubes (SWCNTs) on silicon surfaces by chemical grafting are presented here. The first approach involves the use of a porous silicon (pSi) substrate featuring a pore size gradient, which is functionalized with 3-aminopropyltriethoxysilane (APTES). Carboxylated SWCNTs are then immobilized on the topography gradient via carbodiimide coupling. Our results show that as the pSi pore size and porosity increase across the substrate the SWCNT coverage decreases concurrently. In contrast, the second gradient is an amine-functionality gradient produced by means of vapor-phase diffusion of APTES from a reservoir onto a silicon wafer where APTES attachment changes as a function of distance from the APTES reservoir. Carboxylated SWCNTs are then immobilized via carbodiimide coupling to the amine-terminated silicon gradient. Our observations confirm that with decreasing APTES density on the surface the coverage of the attached SWCNTs also decreases. These gradient platforms pave the way for the time-efficient optimization of SWCNT coverage for applications ranging from field emission to water filtration to drug delivery.
本文提出了两种在硅表面通过化学接枝制备垂直排列单壁碳纳米管(SWCNT)梯度的方法。第一种方法涉及使用具有孔径梯度的多孔硅(pSi)衬底,该衬底用 3-氨丙基三乙氧基硅烷(APTES)功能化。然后通过碳二亚胺偶联将羧基化的 SWCNT 固定在形貌梯度上。我们的结果表明,随着 pSi 孔径和孔隙率在整个衬底上增加,SWCNT 的覆盖率同时降低。相比之下,第二种梯度是通过 APTES 从储液器气相扩散到硅晶片上产生的胺官能度梯度,其中 APTES 附着随距 APTES 储液器的距离而变化。然后通过碳二亚胺偶联将羧基化的 SWCNT 固定到胺封端的硅梯度上。我们的观察结果证实,随着表面上 APTES 密度的降低,附着的 SWCNT 的覆盖率也降低。这些梯度平台为从场发射到水过滤到药物输送等各种应用中优化 SWCNT 覆盖率提供了一种高效的方法。