Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing, People's Republic of China.
Nanotechnology. 2010 Nov 26;21(47):475602. doi: 10.1088/0957-4484/21/47/475602. Epub 2010 Oct 29.
The dependence of crystal structure on contributions of adatom diffusion (ADD) and precursor direct impingement (DIM) was investigated for vapor-liquid-solid growth of InAs nanowires (NWs). The ADD contributions from the sidewalls and substrate surface can be changed by using GaAs NWs of different length as the basis for growing InAs NWs. We found that pure zinc-blende structure is favored when DIM contributions dominate. Moreover, without changing the NW diameter or growth parameters (such as temperature or V/III ratio), a transition from zinc-blende to wurtzite structure can be realized by increasing the ADD contributions. A nucleation model is proposed in which ADD and DIM contributions play different roles in determining the location and phase of the nucleus.
我们研究了在砷化镓（GaAs）纳米线（NWs）的基础上生长的砷化铟（InAs）纳米线（NWs）的晶体结构对自组装原子层扩散（ADD）和前驱物直接撞击（DIM）的依赖性。通过使用不同长度的 GaAs NWs 作为生长 InAs NWs 的基础，可以改变来自侧壁和衬底表面的 ADD 贡献。我们发现，当 DIM 贡献占主导地位时，优先形成纯闪锌矿结构。此外，通过增加 ADD 贡献，可以在不改变 NW 直径或生长参数（如温度或 V/III 比）的情况下，实现从闪锌矿到纤锌矿结构的转变。我们提出了一种成核模型，其中 ADD 和 DIM 贡献在确定核的位置和相方面起着不同的作用。
