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注意:通过半导体腐蚀产物与黄铜之间形成的肖特基势垒二极管测量黄铜的脱锌。

Note: Measuring dezincification of brass by Schottky barrier diodes formed between semiconductor corrosion products and brass.

作者信息

Bond J W

机构信息

Northamptonshire Police, Force HQ, Wootton Hall, Northampton NN4 OJQ, United Kingdom.

出版信息

Rev Sci Instrum. 2010 Oct;81(10):106101. doi: 10.1063/1.3484285.

DOI:10.1063/1.3484285
PMID:21034129
Abstract

A newly developed method is presented for measuring dezincification on the surface of brass from a consideration of the forward and reverse bias potential drop across a Schottky barrier diode formed between n-type zinc oxide or p-type copper (I) oxide corrosion products and the brass substrate. Electrical connection to the corrosion product is made with zinc and platinum tipped probes, approximately 1 mm diameter. Comparison with x-ray photoelectron spectroscopy shows the difference between the forward and reverse bias potential drop to be dependent on the relative abundance of the corrosion products and the work function of the metal probe. This difference, for a zinc tipped probe, gives a statistically significant correlation to the surface zinc to copper ratio and the degree of dezincification. Details of the setup, operation, and testing of a portable instrument designed to measure dezincification of brass by this method are given.

摘要

本文提出了一种新开发的方法,该方法通过考虑在n型氧化锌或p型氧化亚铜腐蚀产物与黄铜基体之间形成的肖特基势垒二极管上的正向和反向偏置电位降来测量黄铜表面的脱锌情况。使用直径约为1毫米、带有锌和铂尖的探针与腐蚀产物进行电连接。与X射线光电子能谱的比较表明,正向和反向偏置电位降的差异取决于腐蚀产物的相对丰度和金属探针的功函数。对于带锌尖的探针,这种差异与表面锌铜比和脱锌程度具有统计学上的显著相关性。文中给出了一种便携式仪器的设置、操作和测试细节,该仪器旨在通过这种方法测量黄铜的脱锌情况。

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Note: Measuring dezincification of brass by Schottky barrier diodes formed between semiconductor corrosion products and brass.注意:通过半导体腐蚀产物与黄铜之间形成的肖特基势垒二极管测量黄铜的脱锌。
Rev Sci Instrum. 2010 Oct;81(10):106101. doi: 10.1063/1.3484285.
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