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单个 Ti 缺陷的能量学和结构及其对 NaAlH(4)分解的影响。

Energetics and structure of single Ti defects and their influence on the decomposition of NaAlH(4).

机构信息

School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, PR China.

出版信息

Phys Chem Chem Phys. 2011 Jan 14;13(2):552-62. doi: 10.1039/c0cp00255k. Epub 2010 Nov 3.

DOI:10.1039/c0cp00255k
PMID:21046044
Abstract

The energetics and structure of various types of single extrinsic Ti defects in NaAlH(4) bulk and (001) slab at the hydriding/dehydriding critical point environment were studied systematically. It is found that the most favorable situation is Ti substituting Al at the subsurface (Ti(Al)(2nd)), which has the highest coordination number for extrinsic Ti ions. The most stable Ti defect in the 1st layer is located at the Al rich interstitial site, namely Ti(i)(1st), accompanied with remarkable strength of Ti-H/Al bond and local geometry deformation at the 1st layer around Ti. Deeper insight of the formation mechanism of Ti defects is obtained by dividing the formation enthalpy of Ti defects into three terms, which are contributed from the cost of removing a substituted host atom if necessary, the cost of structure deformation, and the gain of bonding between Ti and its surrounding ions in the formation of the defects. This associates the formation energy directly with the local structure of Ti defects. For the first time, we adopt H(f)(H), H(f)(H-H), H(f)(AlH(3)) and H(f)(Na) to discuss the hydrogen release ability of the Ti doped NaAlH(4). We find that TiAl(4)H(20) and TiAl(3)H(12) complexes are formed around Ti(Al)(2nd) and Ti(i)(1st) respectively, which significantly promotes the dehydriding ability of NaAlH(4). What is more, the catalyst mechanism of Ti on the decomposition of NaAlH(4) is linked to the AlH(3) mechanism according to our calculations.

摘要

系统研究了各种类型的单 extrinsic Ti 缺陷在 NaAlH(4)体相和 (001) 面 hydriding/dehydriding 临界点环境中的能量和结构。结果发现,最有利的情况是 Ti 取代亚表面的 Al(Ti(Al)(2nd)),这使得 extrinsic Ti 离子具有最高的配位数。第一层中最稳定的 Ti 缺陷位于富 Al 的间隙位,即 Ti(i)(1st),同时伴随着 Ti-H/Al 键的显著增强和 Ti 周围第一层局部几何变形。通过将 Ti 缺陷的形成焓分为三个项来深入了解 Ti 缺陷的形成机制,这三个项分别来自于必要时去除取代的主原子的成本、结构变形的成本以及形成缺陷时 Ti 与其周围离子之间键合的收益。这将形成能直接与 Ti 缺陷的局部结构相关联。首次采用 H(f)(H)、H(f)(H-H)、H(f)(AlH(3))和 H(f)(Na)来讨论 Ti 掺杂 NaAlH(4)的放氢能力。我们发现 TiAl(4)H(20)和 TiAl(3)H(12)复合物分别围绕 Ti(Al)(2nd)和 Ti(i)(1st)形成,这显著促进了 NaAlH(4)的脱氢能力。更重要的是,根据我们的计算,Ti 对 NaAlH(4)分解的催化机制与 AlH(3)机制有关。

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