Goodman W A, Goorsky M S
Appl Opt. 1995 Jun 20;34(18):3367-73. doi: 10.1364/AO.34.003367.
We engineered a factor-of-4 reduction in the bulk absorption coefficient over the 2.6-to-3.0-µm bandwidth in single-crystal Czochralski silicon optics for high-energy infrared lasers with high-temperature annealing treatments. Defect engineering adapted from the integrated circuit industry has been used to reduce the absorption coefficient across the 1.5-to-5-µm bandwidth for substrates up to 5 cm thick. A high-temperature oxygen-dispersion anneal dissolves precipitates and thermal donors that are present in the as-grown material. The process has been verified experimentally with Fourier transform infrared spectroscopy, infrared laser calorimetry, and Hall measurements. Reduction of the absorption coefficient results in less substrate heating and thermal distortion of the optical surface. The process is appropriate for other silicon infrared optics applications such as thermal-imaging systems, infrared windows, and spectrophotometers.
通过高温退火处理，我们在用于高能红外激光器的单晶直拉硅光学元件中，将2.6至3.0微米带宽内的体吸收系数降低了四倍。借鉴集成电路行业的缺陷工程技术，已用于降低厚度达5厘米的衬底在1.5至5微米带宽内的吸收系数。高温氧扩散退火可溶解生长态材料中存在的沉淀物和热施主。该工艺已通过傅里叶变换红外光谱、红外激光量热法和霍尔测量进行了实验验证。吸收系数的降低导致衬底加热减少和光学表面的热畸变减少。该工艺适用于其他硅红外光学应用，如热成像系统、红外窗口和分光光度计。
