National Institute of Standard and Technology, Gaithersburg, Maryland 20899, USA.
ACS Nano. 2010 Dec 28;4(12):7538-44. doi: 10.1021/nn1018768. Epub 2010 Nov 16.
The elastic moduli of polythiophenes, regioregular poly(3-hexylthiophene) (P3HT) and poly-(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT), are compared to their field effect mobility showing a proportional trend. The elastic moduli of the films are measured using a buckling-based metrology, and the mobility is determined from the electrical characteristics of bottom contact thin film transistors. Moreover, the crack onset strain of pBTTT films is shown to be less than 2.5%, whereas that of P3HT is greater than 150%. These results show that increased long-range order in polythiophene semiconductors, which is generally thought to be essential for improved charge mobility, can also stiffen and enbrittle the film. This work highlights the critical role of quantitative mechanical property measurements in guiding the development of flexible organic semiconductors.
聚噻吩的弹性模量、规正聚(3-己基噻吩)(P3HT)和聚(2,5-双(3-烷基噻吩-2-基)噻吩[3,2-b]噻吩)(pBTTT)与场效应迁移率进行了比较,发现它们之间存在比例关系。通过基于屈曲的计量学测量薄膜的弹性模量,并从底接触薄膜晶体管的电特性确定迁移率。此外,还表明 pBTTT 薄膜的裂纹起始应变小于 2.5%,而 P3HT 薄膜的应变大于 150%。这些结果表明,聚噻吩半导体中长程有序的增加,通常被认为是提高电荷迁移率所必需的,也会使薄膜变硬变脆。这项工作强调了定量力学性能测量在指导柔性有机半导体发展中的关键作用。