State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Phys Chem Chem Phys. 2011 Jan 28;13(4):1379-85. doi: 10.1039/c0cp00521e. Epub 2010 Nov 23.
We have employed DFT calculations to carry out an accurate analysis of the effect of N- and NH-doping on the visible photocatalytic activity in the cubic In(2)O(3). In the substitutional N-doped In(2)O(3), the 2p impurity states of N induce a red shift in the optical absorption, while in the interstitial N-doping the red shift is dominantly caused by the localized π antibonding states of NO. When a H atom is accompanied by a N impurity in the lattice, the H atom acts as a charge donor and compensates the hole state created by N-doping, thus the energy level of the impurity states is reduced. As a result, the mixing of impurity states and the valence band is enhanced. At the same nitrogen dopant concentration, NH-codoping yields a larger band gap narrowing, especially for the interstitial NH-codoping. The theoretical calculations presented in this work explain well the previous experimental results of the enhanced visible photocatalytic activity in NH-codoped cubic In(2)O(3).
我们采用密度泛函理论(DFT)计算,对立方 In(2)O(3)中 N 和 NH 掺杂对可见光光催化活性的影响进行了精确分析。在替代 N 掺杂的 In(2)O(3)中,N 的 2p 杂质态导致光吸收红移,而在间隙 N 掺杂中,红移主要由 NO 的局域 π 反键态引起。当晶格中存在 N 杂质和 H 原子时,H 原子充当电荷供体,补偿 N 掺杂产生的空穴态,从而降低杂质态的能级。结果,杂质态和价带的混合增强。在相同的氮掺杂浓度下,NH 共掺杂导致带隙变窄更大,特别是对于间隙 NH 共掺杂。本工作中的理论计算很好地解释了先前实验中 NH 共掺杂立方 In(2)O(3)可见光光催化活性增强的结果。