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NiO 的 N 和 C 掺杂的杂化密度泛函理论描述。

Hybrid density functional theory description of N- and C-doping of NiO.

机构信息

Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.

出版信息

J Chem Phys. 2011 Jun 14;134(22):224703. doi: 10.1063/1.3596949.

Abstract

The large intrinsic bandgap of NiO hinders its potential application as a photocatalyst under visible-light irradiation. In this study, we have performed first-principles screened exchange hybrid density functional theory with the HSE06 functional calculations of N- and C-doped NiO to investigate the effect of doping on the electronic structure of NiO. C-doping at an oxygen site induces gap states due to the dopant, the positions of which suggest that the top of the valence band is made up primarily of C 2p-derived states with some Ni 3d contributions, and the lowest-energy empty state is in the middle of the gap. This leads to an effective bandgap of 1.7 eV, which is of potential interest for photocatalytic applications. N-doping induces comparatively little dopant-Ni 3d interactions, but results in similar positions of dopant-induced states, i.e., the top of the valence band is made up of dopant 2p states and the lowest unoccupied state is the empty gap state derived from the dopant, leading to bandgap narrowing. With the hybrid density functional theory (DFT) results available, we discuss issues with the DFT corrected for on-site Coulomb description of these systems.

摘要

NiO 的大固有带隙阻碍了其在可见光照射下作为光催化剂的潜在应用。在这项研究中,我们通过 HSE06 函数的第一性原理筛选交换杂化密度泛函理论对 N 和 C 掺杂 NiO 进行了计算,以研究掺杂对 NiO 电子结构的影响。氧位上的 C 掺杂会由于掺杂剂而产生带隙态,其位置表明价带的顶部主要由 C 2p 衍生态和一些 Ni 3d 贡献组成,最低能量空态位于带隙中间。这导致了 1.7eV 的有效带隙,这对于光催化应用具有潜在的兴趣。N 掺杂诱导的掺杂-Ni 3d 相互作用相对较小,但会导致掺杂诱导态的位置相似,即价带的顶部由掺杂剂 2p 态组成,最低未占据态是来自掺杂剂的空带隙态,从而导致带隙变窄。有了杂化密度泛函理论(DFT)的结果,我们讨论了对这些系统的局域库仑描述进行 DFT 修正的问题。

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