Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/silicon capacitors with blocking oxide layers formed under the radical oxidation process.

We propose a Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure whose blocking oxide is formed by radical oxidation on the silicon nitride (Si3N4) layer to improve the electrical and reliability characteristics. We directly compare the electrical and reliability properties of the MONOS capacitors with two different blocking oxide (SiO2) layers, which are called a "radical oxide" grown by the radical oxidation and a "CVD oxide" deposited by chemical vapor deposition (CVD) respectively. The MONOS capacitor with a radical oxide shows a larger C-V memory window of 3.6 V at sweep voltages from 9 V to -9 V, faster program/erase speeds of 1 micros/1 ms at bias voltages of -6 V and 8 V, a lower leakage current of 7 pA and a longer data retention, compared to those of the MONOS capacitor with a CVD oxide. These improvements have been attributed to both high densification of blocking oxide film and increased nitride-related memory traps at the interface between the blocking oxide and Si3N4 layer by radical oxidation.