School of Mechanical Engineering, Yeungnam University, Gyeongsan, Korea.
Nanotechnology. 2011 Jan 21;22(3):035702. doi: 10.1088/0957-4484/22/3/035702. Epub 2010 Dec 9.
Ni nanorod arrays have been vertically grown on a Ta-coated Si substrate via an electrodeposition process through the nanopores of a porous alumina membrane. Field emission studies of the samples are performed which show a considerable low-threshold field around 5 V µm(-1). The field emission mechanism followed Fowler-Nordheim tunneling due to large field enhancement at the emitter tips. Low-dimensional structures of the nanorod tips provided the large geometrical field enhancement and thus produce a high enough local or barrier field for low-threshold cold-field electron emission. The cost-effective synthesis of vertically aligned Ni nanorods on an Si substrate and low-threshold field emission properties can provide a potential alternative to conventional carbon-based field emitters for low power panel applications.
通过在多孔氧化铝膜的纳米孔中进行电沉积过程，在 Ta 涂层的 Si 衬底上垂直生长了 Ni 纳米棒阵列。对样品进行了场发射研究，结果表明在约 5 V µm(-1) 的低阈值电场下表现出相当大的场发射。由于发射尖端的大场增强，场发射机制遵循 Fowler-Nordheim 隧道效应。纳米棒尖端的低维结构提供了大的几何场增强，从而产生了足够高的局部或势垒场，以实现低阈值冷场电子发射。在 Si 衬底上垂直排列的 Ni 纳米棒的低成本合成和低阈值场发射特性为低功率平板应用中的传统碳基场发射器提供了一种潜在的替代方案。
