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Midwave thermal infrared detection using semiconductor selective absorption.

作者信息

Shea Ryan P, Gawarikar Anand S, Talghader Joseph J

机构信息

Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA.

出版信息

Opt Express. 2010 Oct 25;18(22):22833-41. doi: 10.1364/OE.18.022833.

DOI:10.1364/OE.18.022833
PMID:21164622
Abstract

The performance of thermal detectors is derived for devices incorporating materials with non-uniform spectral absorption. A detector designed to have low absorption in the primary thermal emission band at a given temperature will have a background-limited radiation noise well below that of a blackbody absorber, which is the condition typically assessed for ultimate thermal detector performance. Specific examples of mid-wave infrared (ʎ ∼ 3-5 μm) devices are described using lead selenide as a primary absorber with optical cavity layers that maximize coupling. An analysis of all significant noise sources is presented for two example room-temperature devices designed to have detectivities up to 4.37 × 10(10) cm Hz(1/2) W(-1), which is a factor 3.1 greater than the traditional blackbody limit. An alternative method of fabricating spectrally selective devices by patterning a plasmonic structure in silver is also considered.

摘要

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