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10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON.

作者信息

Kim Hyun-Soo, Kim Dong Churl, Kim Ki-Soo, Choi Byung-Seok, Kwon O-Kyun

机构信息

Photonic/Wireless Convergence Components Department, ETRI, 161 Gajeong-dong, Yuseong, Daejeon 305-700, Korea.

出版信息

Opt Express. 2010 Oct 25;18(22):23324-30. doi: 10.1364/OE.18.023324.

DOI:10.1364/OE.18.023324
PMID:21164673
Abstract

We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10(-9) bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10(-9) BER.

摘要

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