Wei Yi-Peng, Kuo Yu-Hsuan
Graduate Institute of Electronics Engineering, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan.
Opt Express. 2010 Nov 8;18(23):23576-83. doi: 10.1364/OE.18.023576.
We present a vertical Ge quantum well (QW) asymmetric Fabry-Perot modulator design and integration scheme without distributed Bragg reflector (DBR). The field-dependent excitonic absorption and the modulator performance are calculated, showing the wide (20-nm-thick) well design gives a large absorption reduction for the normally-off modulator operation. For a 47 QW modulator, the theoretical contrast ratio exceeds 40 dB at 1 V and increases to 52.3 dB at 4 V bias with a 12.3-dB insertion loss and over-9-nm optical bandwidth (contrast>3dB). This robust DBR-free design can enable high-contrast-ratio Ge QW modulators.
我们提出了一种无分布式布拉格反射器（DBR）的垂直锗量子阱（QW）非对称法布里-珀罗调制器设计与集成方案。计算了与电场相关的激子吸收和调制器性能，结果表明，宽（20纳米厚）阱设计为常关调制器操作带来了大幅吸收降低。对于一个47量子阱调制器，理论对比度在1伏时超过40分贝，在4伏偏压下增加到52.3分贝，插入损耗为12.3分贝，光带宽超过9纳米（对比度>3分贝）。这种稳健的无DBR设计能够实现高对比度的锗量子阱调制器。
