Lee Y C, Tseng S C, Chen H L, Yu C C, Cheng W L, Du C H, Lin C H
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Opt Express. 2010 Sep 13;18 Suppl 3:A421-31. doi: 10.1364/OE.18.00A421.
In this study, we used the autocloning effect on pyramid structures to develop broad-bandwidth, omnidirectional antireflection structures for silicon solar cells. The angular dependence of reflectance on several pyramid structures was systematically investigated. The deposition of three-layer autocloned films reduced the refractive index gap between air and silicon, resulting in an increase in the amount of transmitted light and a decrease in the total light escaping. The average reflectance decreased dramatically to ca. 2-3% at incident angles from 0 to 60° for both sub-wavelength- and micrometer-scale pyramid structures. The measured reflectance of the autocloned structure was less than 4% in the wavelength range from 400 to 1000 nm for incident angles from 0 to 60°. Therefore, the autocloning technique, combined with optical thin films and optical gradient structures, is a practical and compatible method for the fabrication of broad-bandwidth, omnidirectional antireflection structures on silicon solar cells.
在本研究中，我们利用金字塔结构上的自克隆效应来开发用于硅太阳能电池的宽带宽、全向抗反射结构。系统地研究了几种金字塔结构的反射率角度依赖性。三层自克隆薄膜的沉积减小了空气与硅之间的折射率差距，导致透射光量增加，总逃逸光量减少。对于亚波长和微米级金字塔结构，在入射角从0到60°时，平均反射率大幅降低至约2 - 3%。对于入射角从0到60°，在波长范围从400到1000 nm内，自克隆结构的测量反射率小于4%。因此，自克隆技术与光学薄膜和光学梯度结构相结合，是在硅太阳能电池上制造宽带宽、全向抗反射结构的一种实用且兼容的方法。
