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强电场下聚合物发光二极管中局域化引起的禁戒单线激子跃迁。

Forbidden singlet exciton transitions induced by localization in polymer light-emitting diodes in a strong electric field.

机构信息

Department of Physics, Zhejiang Normal University, Jinhua, Zhejiang, China.

出版信息

J Phys Chem B. 2011 Feb 10;115(5):869-73. doi: 10.1021/jp109452n. Epub 2010 Dec 21.

DOI:10.1021/jp109452n
PMID:21174472
Abstract

Through combining the electron transition process and dipole moment evolution as well as electron-phonon coupling, molecular dynamics calculations show that the radiative decay of singlet excitons in a conjugated polymer, such as a polymer light-emitting diode (PLED), is largely determined by the evolution of the dipole moment. Without an electric field, the decay life of a singlet exciton is about 1 ns. Once an electric field is applied and exceeds a critical value, with electron-phonon coupling, the original lattice structure evolves into two new localized lattice distortions, consistent with the experimental results. Owing to the new lattice structure and self-trapping, the dipole moment rapidly decreases to zero within 5 fs, eliminating the radiative decay of the singlet exciton.

摘要

通过结合电子跃迁过程和偶极矩演化以及电子-声子耦合,分子动力学计算表明,共轭聚合物(如聚合物发光二极管(PLED))中单重激子的辐射衰减主要取决于偶极矩的演化。在没有电场的情况下,单重激子的衰减寿命约为 1 ns。一旦施加电场并超过临界值,通过电子-声子耦合,原始晶格结构演变成两个新的局域晶格畸变,与实验结果一致。由于新的晶格结构和自陷,偶极矩在 5 fs 内迅速降至零,从而消除了单重激子的辐射衰减。

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