Department of Nuclear, Plasma and Radiological Engineering, University of Illinois, Urbana-Champaign, Illinois 61801, United States.
J Phys Chem A. 2011 Jan 27;115(3):318-28. doi: 10.1021/jp1065083. Epub 2010 Dec 28.
We propose a complementary interpretation of the mechanism responsible for the strong enhancement observed in surface enhanced raman scattering (SERS). The effect of a strong static local electric field due to the Schottky barrier at the metal-molecule junction on SERS is systematically investigated. The study provides a viable explanation to the low repeatability of SERS experiments as well as the Raman peak shifts as observed in SERS and raw Raman spectra. It was found that a strong electrostatic built-in field at the metal-molecule junction along specific orientations can result in 2-4 more orders of enhancement in SERS.
我们提出了一种对表面增强拉曼散射（SERS）中观察到的强增强现象的机制的补充解释。系统地研究了金属-分子结处肖特基势垒引起的强静态局部电场对 SERS 的影响。该研究为 SERS 实验的低重复性以及 SERS 和原始拉曼光谱中观察到的拉曼峰位移提供了合理的解释。研究发现，在特定方向上，金属-分子结处的强静电内置场可以使 SERS 的增强幅度提高 2-4 个数量级。
