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MFI 骨架中 Si 空位和[Ti(OSi)4]及[Ti(OSi)3OH]位的位置:大团簇和全从头计算研究。

Location of Si vacancies and [Ti(OSi)4] and [Ti(OSi)3OH] sites in the MFI framework: a large cluster and full ab initio study.

机构信息

Institute for Computational Science and Engineering, Laboratory of New Fiber Materials and Modern Textile, Qingdao University, Qingdao, Shandong, PR China.

出版信息

J Phys Chem A. 2011 Feb 10;115(5):940-7. doi: 10.1021/jp110977m. Epub 2011 Jan 10.

Abstract

Titanium silicalite-1 (TS-1) is an important catalyst for selective oxidation reactions. However, the nature and structure of the active sites and the mechanistic details of the catalytic reactions over TS-1 have not been well-understood, leaving a continuous debate on the genesis of active sites on the TS-1 surface in the literature. In this work, the location of Si vacancies and [Ti(OSi)(4)] and [Ti(OSi)(3)OH] sites in the MFI (Framework Type Code of ZSM-5 (Zeolite Socony Mobile-Five)) framework has been studied using a full ab initio method with 40T clusters with a Si:Ti molar ratio of 39:1. It was shown that the former four energetically favorable sites for Si vacancies are T6, T12, T4, and T8 and for Ti centers of [Ti(OSi)(4)] are T10, T4, T8 and T11, being partially the same sites. Whether by replacing Si vacancies or substituting the fully coordinated Si sites, the most preferential site for Ti is T10, which indicates that the insertion mechanism does not affect the favorable sites of Ti in the MFI lattice. For the defective [Ti(OSi)(3)OH] sites, it was found that the Si vacancy at T6 with a Ti at its neighboring T9 site (T6-def-T9-Ti pair) is the most energetically favorable one, followed by a T6-def-T5-Ti pair with a small energy gap. These findings are significant to elucidate the nature of the active sites and the mechanism of reactions catalyzed by TS-1 and to design the TS-1 catalyst.

摘要

钛硅分子筛-1(TS-1)是用于选择性氧化反应的重要催化剂。然而,TS-1 上的活性位的本质和结构以及催化反应的机理细节尚未得到很好的理解,这使得文献中关于 TS-1 表面活性位的起源仍存在持续的争论。在这项工作中,使用具有 40T 簇的完全从头计算方法研究了 MFI(ZSM-5(沸石 Socony Mobil-Five)骨架类型代码)骨架中 Si 空位和 [Ti(OSi)(4)] 和 [Ti(OSi)(3)OH] 位的位置,Si:Ti 摩尔比为 39:1。结果表明,Si 空位的前四个能量有利位置是 T6、T12、T4 和 T8,而 [Ti(OSi)(4)] 的 Ti 中心是 T10、T4、T8 和 T11,部分是相同的位置。无论是通过取代 Si 空位还是取代完全配位的 Si 位,Ti 的最优先位置都是 T10,这表明插入机制不影响 MFI 晶格中 Ti 的有利位置。对于有缺陷的 [Ti(OSi)(3)OH] 位,发现 T6 处的 Si 空位与相邻 T9 位的 Ti(T6-def-T9-Ti 对)的结合是最有利的,其次是 T6-def-T5-Ti 对,能量间隙较小。这些发现对于阐明 TS-1 催化反应的活性位本质和反应机理以及设计 TS-1 催化剂具有重要意义。

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