Department of Physics and Astronomy, University of California, Riverside, California 92521, USA.
Phys Rev Lett. 2010 Oct 15;105(16):167203. doi: 10.1103/PhysRevLett.105.167203. Epub 2010 Oct 12.
The spin dependent properties of epitaxial Fe₃O₄ thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optical Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe₃O₄ film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well states forming in the Fe₃O₄ film. Quantum confinement of the t(2g) states near the Fermi level provides an explanation for the similar thickness dependences of the FPP and MOKE oscillations.
通过铁磁近邻极化 (FPP) 效应和磁光克尔效应 (MOKE) 研究了 GaAs(001) 上外延 Fe₃O₄ 薄膜的自旋相关性质。FPP 和 MOKE 都表现出与 Fe₃O₄ 薄膜厚度有关的振荡，并且这些振荡大到足以引起符号的重复反转。我们将这种振荡行为归因于在 Fe₃O₄ 薄膜中形成的自旋极化量子阱态。在费米能级附近 t(2g)态的量子限制为 FPP 和 MOKE 振荡的相似厚度依赖性提供了一种解释。
