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四硫富瓦烯衍生物载流子迁移率的理论研究。

Theoretical study on charge carrier mobilities of tetrathiafulvalene derivatives.

机构信息

State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Beijing National Laboratory for Molecular Sciences (BNLMS), Chinese Academy of Sciences, Zhongguancun, Beijing, China.

出版信息

Phys Chem Chem Phys. 2011 Apr 7;13(13):5642-50. doi: 10.1039/c0cp01016b. Epub 2011 Feb 8.

Abstract

We calculated the hole and electron mobilities of tetrathiafulvalene (TTF) derivative crystals using first-principles calculations and the Marcus theory of electron transfer. The hole and electron reorganization energies were found to decrease with the extension of π-conjugated orbitals. The calculated hole mobilities of TTF, dibenzo-tetrathiafulvalene (DB-TTF), and dinaphtho-tetrathiafulvalene (DN-TTF) agree well with the experimental results. In addition, with the increase of the number of benzene rings attached to the TTF skeleton, the hole mobilities decrease and the electron mobilities increase. The calculated electron mobility of dianthro-tetrathiafulvalene (DA-TTF) based on a virtual crystal structure is much larger than the hole one due to the small electron reorganization energy and large electron coupling. This suggests that the charge transfer properties of the TTF derivatives can be modified when the number of aromatic rings on TTF skeleton increases.

摘要

我们使用第一性原理计算和电子转移的 Marcus 理论计算了四硫富瓦烯(TTF)衍生物晶体的空穴和电子迁移率。发现空穴和电子重组能随π共轭轨道的延伸而降低。计算得到的 TTF、二苯并四硫富瓦烯(DB-TTF)和二萘并四硫富瓦烯(DN-TTF)的空穴迁移率与实验结果吻合较好。此外,随着与 TTF 骨架相连的苯环数量的增加,空穴迁移率降低,电子迁移率增加。基于虚拟晶体结构计算得到的二蒽基四硫富瓦烯(DA-TTF)的电子迁移率远大于空穴迁移率,这是由于电子重组能小、电子耦合大。这表明当 TTF 骨架上的芳环数量增加时,TTF 衍生物的电荷转移性质可以得到修饰。

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