通过养分补给深入了解纯硅沸石膜的晶圆内结晶。

Insight into on-wafer crystallization of pure-silica-zeolite films through nutrient replenishment.

机构信息

Department of Chemical and Environmental Engineering, University of California, Riverside, Riverside, California 92521, United States.

出版信息

Langmuir. 2011 Apr 5;27(7):3283-5. doi: 10.1021/la200603z. Epub 2011 Mar 1.

DOI:10.1021/la200603z

PMID:21361298

Abstract

Tetraethylorthosilicate (TEOS) is added to a pure-silica-zeolite MEL nanoparticle suspension and the mixture is subsequently used for preparing spin-on low-dielectric constant (low-k) films. The films are then characterized by ellipsometric porosimetry, transmission electron microscopy (TEM), and nanoindentation. Investigation into the film microstructure indicates that the addition of TEOS significantly increases the fraction of the crystalline domains, decreases the inter-crystal mesopore size, and narrows the pore size distribution. Films with 12% TEOS loading have a mean pore size distribution centered at 3.5 nm (diameter) with a full width at half maximum (fwhm) of 0.8 nm, while those with no TEOS have a distribution at 11.1 nm and fwhm of 7.9 nm. At 12% TEOS loading, the reduced modulus and hardness are 11.0 and 1.12 GPa, respectively; without TEOS, the values are 6.4 and 0.57 GPa.

摘要

正硅酸乙酯（TEOS）加入纯硅沸石 MEL 纳米颗粒悬浮液中，然后将混合物用于制备旋涂低介电常数（低 k ）薄膜。然后通过椭偏孔隙率法、透射电子显微镜（TEM）和纳米压痕法对薄膜进行表征。对薄膜微观结构的研究表明，添加 TEOS 显著增加了结晶区的分数，减小了晶间中孔的尺寸，并缩小了孔径分布。添加 12%TEOS 的薄膜的平均孔径分布中心在 3.5nm（直径），半峰全宽（fwhm）为 0.8nm，而没有 TEOS 的薄膜的分布在 11.1nm，fwhm 为 7.9nm。在 12%TEOS 负载下，弹性模量和硬度分别为 11.0 和 1.12GPa；没有 TEOS 时，值分别为 6.4 和 0.57GPa。