Murao Tadashi, Saitoh Kunimasa, Koshiba Masanori
Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan.
Opt Express. 2011 Jan 31;19(3):1713-27. doi: 10.1364/OE.19.001713.
In this paper, we propose a novel mechanism for suppression of higher-order modes (HOMs), namely multiple resonant coupling, in all-solid photonic bandgap fibers (PBGFs) with effectively large core diameters. In an analogy to the well-known tight-binding theory in solid-state physics, multiple anti-resonant reflecting optical waveguide (ARROW) modes bound in designedly arranged defects in the cladding make up Bloch states and resultant photonic bands with a finite effective-index width, which contribute to the suppression of HOMs. In particular, contrary to the conventional method for the HOM suppression using the index-matching of the HOMs in the core of the PBGF and the defect mode arranged in the cladding, the proposed mechanism guarantees a broadband HOM suppression without a precise structural design. This effect is explained by the multiple resonant coupling, as well as an enhanced confinement loss mechanism which occurs near the condition satisfying the multiple resonant coupling. Moreover, we show that the proposed structure exhibits a lower bending loss characteristic when compared to the conventional all-solid PBGFs. The simultaneous realization of the single-mode operation and the low bending loss property is due to the novel cladding concept named as heterostructured cladding. The proposed structure also resolves the issue for the increased confinement loss property in the first-order photonic bandgap (PBG) at the same time.
在本文中,我们提出了一种用于抑制高阶模(HOMs)的新型机制,即多共振耦合,该机制适用于具有有效大芯径的全固态光子带隙光纤(PBGFs)。类似于固态物理学中著名的紧束缚理论,包层中精心排列的缺陷所束缚的多个反共振反射光波导(ARROW)模构成了布洛赫态和具有有限有效折射率宽度的光子带,这有助于抑制高阶模。特别地,与利用PBGF纤芯中的高阶模与包层中排列的缺陷模的折射率匹配来抑制高阶模的传统方法相反,所提出的机制无需精确的结构设计就能保证宽带高阶模抑制。这种效应可以通过多共振耦合以及在满足多共振耦合条件附近出现的增强的限制损耗机制来解释。此外,我们表明,与传统的全固态PBGF相比,所提出的结构具有更低的弯曲损耗特性。单模工作和低弯曲损耗特性的同时实现归因于一种名为异质结构包层的新型包层概念。所提出的结构同时也解决了一阶光子带隙(PBG)中限制损耗特性增加的问题。