Chen Chin-Hui, Matsuo Shinji, Nozaki Kengo, Shinya Akihiko, Sato Tomonari, Kawaguchi Yoshihiro, Sumikura Hisashi, Notomi Masaya
NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Opt Express. 2011 Feb 14;19(4):3387-95. doi: 10.1364/OE.19.003387.
We have demonstrated an all-optical memory by using InGaAsP/InP buried heterostructure photonic crystal (BH-PhC) lasers. We achieved distinct optical injection locking bistability in an ultra-compact active region (4 × 0.3 × 0.16 μm3) with only 25 μW pump power in the PhC waveguide, which is two orders less than previously reported optical memories based on other bistable semiconductor lasers. Dynamic memory operations were achieved with pump power of 100 μW and switching power of 22 μW and 71 μW in the PhC waveguide. Fast switching times of about 60 ps were achieved. To the authors' best knowledge, this is the first demonstration of PhC laser-based all-optical memory.
我们通过使用InGaAsP/InP掩埋异质结构光子晶体（BH-PhC）激光器展示了一种全光存储器。我们在超紧凑有源区（4×0.3×0.16μm³）中实现了显著的光注入锁定双稳性，在光子晶体波导中仅需25μW的泵浦功率，这比先前报道的基于其他双稳半导体激光器的光存储器低两个数量级。在光子晶体波导中，通过100μW的泵浦功率以及22μW和71μW的开关功率实现了动态存储操作。实现了约60 ps的快速开关时间。据作者所知，这是基于光子晶体激光器的全光存储器的首次演示。
