通过倾斜角沉积法制备的具有MoO3中间层的有机发光二极管性能得到改善。

Improved performance of organic light-emitting diodes with MoO3 interlayer by oblique angle deposition.

作者信息

Liu S W, Divayana Y, Sun X W, Wang Y, Leck K S, Demir H V

机构信息

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.

出版信息

Opt Express. 2011 Feb 28;19(5):4513-20. doi: 10.1364/OE.19.004513.

DOI:10.1364/OE.19.004513

PMID:21369282

Abstract

We fabricated and demonstrated improved organic light emitting diodes (OLEDs) in a thin film architecture of indium tin oxide (ITO)/ molybdenum trioxide (MoO3) (20 nm)/N,N'-Di(naphth-2-yl)-N,N'-diphenyl-benzidine (NPB) (50 nm)/ tris-(8-hydroxyquinoline) (Alq3) (70 nm)/Mg:Ag (200 nm) using an oblique angle deposition technique by which MoO3 was deposited at oblique angles (θ) with respect to the surface normal. It was found that, without sacrificing the power efficiency of the device, the device current efficiency and external quantum efficiency were significantly enhanced at an oblique deposition angle of θ=60° for MoO3.

摘要

我们采用倾斜角沉积技术制备并展示了改进的有机发光二极管（OLED），其薄膜结构为氧化铟锡（ITO）/三氧化钼（MoO₃）（20纳米）/N，N'-二（萘-2-基）-N，N'-二苯基联苯胺（NPB）（50纳米）/三（8-羟基喹啉）铝（Alq₃）（70纳米）/镁银合金（Mg:Ag）（200纳米），通过该技术，MoO₃相对于表面法线以倾斜角（θ）进行沉积。结果发现，在不牺牲器件功率效率的情况下，当MoO₃的倾斜沉积角为θ = 60°时，器件的电流效率和外量子效率显著提高。