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逐层去除石墨烯以进行器件图案化。

Layer-by-layer removal of graphene for device patterning.

机构信息

Department of Chemistry, Smalley Institute for Nanoscale Science and Technology, Rice University, MS-222, 6100 Main Street, Houston, TX 77005, USA.

出版信息

Science. 2011 Mar 4;331(6021):1168-72. doi: 10.1126/science.1199183.

DOI:10.1126/science.1199183
PMID:21385709
Abstract

The patterning of graphene is useful in fabricating electronic devices, but existing methods do not allow control of the number of layers of graphene that are removed. We show that sputter-coating graphene and graphene-like materials with zinc and dissolving the latter with dilute acid removes one graphene layer and leaves the lower layers intact. The method works with the four different types of graphene and graphene-like materials: graphene oxide, chemically converted graphene, chemical vapor-deposited graphene, and micromechanically cleaved ("clear-tape") graphene. On the basis of our data, the top graphene layer is damaged by the sputtering process, and the acid treatment removes the damaged layer of carbon. When used with predesigned zinc patterns, this method can be viewed as lithography that etches the sample with single-atomic-layer resolution.

摘要

在制造电子设备时,石墨烯的图案化很有用,但现有的方法无法控制去除的石墨烯层数。我们表明,用锌溅射涂覆石墨烯和类石墨烯材料,然后用稀酸溶解后者,可以去除一层石墨烯,而留下较低的层完好无损。该方法适用于四种不同类型的石墨烯和类石墨烯材料:氧化石墨烯、化学转化石墨烯、化学气相沉积石墨烯和微机械剥离的“透明胶带”石墨烯。根据我们的数据,溅射过程会损坏顶层石墨烯,而酸处理会去除受损的碳层。当与预先设计的锌图案一起使用时,这种方法可以被视为具有单层原子分辨率的光刻技术,对样品进行刻蚀。

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