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使用时间分辨扫描隧道显微镜研究半导体表面的动态过程。

Study of dynamic processes on semiconductor surfaces using time-resolved scanning tunneling microscopy.

机构信息

Physical Aspects of Nanoelectronics and Solid State Physics, MESA+  Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.

出版信息

J Phys Condens Matter. 2010 Jul 7;22(26):264007. doi: 10.1088/0953-8984/22/26/264007. Epub 2010 Jun 14.

Abstract

The time resolution of a conventional scanning tunneling microscope can be improved by many orders of magnitude by recording open feedback loop current-time traces. The enhanced time resolution comes, however, at the expense of the ability to obtain spatial information. In this paper, we first consider the Ge(111)-c(2 × 8) surface as an example of how surface dynamics can show up in conventional STM images. After a brief introduction to the time-resolved scanning tunneling microscopy technique, its capabilities will be demonstrated by addressing the dynamics of a dimer pair of a Pt modified Ge(001).

摘要

通过记录开环反馈电流-时间轨迹,可以将传统扫描隧道显微镜的时间分辨率提高几个数量级。然而,这种增强的时间分辨率是以获取空间信息的能力为代价的。在本文中,我们首先以 Ge(111)-c(2 × 8)表面为例,说明表面动力学如何在传统 STM 图像中表现出来。在简要介绍时间分辨扫描隧道显微镜技术后,将通过解决 Pt 修饰 Ge(001)上的二聚体对的动力学来展示该技术的能力。

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