Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin, Germany.
J Phys Condens Matter. 2010 Apr 7;22(13):135008. doi: 10.1088/0953-8984/22/13/135008. Epub 2010 Mar 12.
The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the interaction between the substrate and the overlayer strongly influences the formation of quantum well states; indium layers only exhibit well defined quantum well states when the layer relaxes from an initial face-centred cubic to the bulk body-centred tetragonal lattice structure. For Pb layers on Si(100) a change in growth orientation inhibits the formation of quantum well states in films thicker than 2 ML.
衬底晶格结构可能对金属覆盖层材料中量子阱态的形成有很大影响。在这里，我们使用角分辨光发射和低能电子衍射研究了三个模型系统：硅（111）上的铟膜以及硅（100）上的铟和铅。数据与基于密度泛函理论的理论预测进行了比较。我们发现，衬底和覆盖层之间的相互作用强烈影响量子阱态的形成；只有当铟层从初始面心立方结构弛豫到体心四方晶格结构时，铟层才会表现出明确的量子阱态。对于硅（100）上的 Pb 层，生长方向的变化会抑制厚度超过 2 ML 的薄膜中量子阱态的形成。
