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量子位错:二维固体 4He 中多个空位的命运。

Quantum dislocations: the fate of multiple vacancies in two-dimensional solid 4He.

机构信息

Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano, Italy.

出版信息

J Phys Condens Matter. 2010 Apr 14;22(14):145401. doi: 10.1088/0953-8984/22/14/145401. Epub 2010 Mar 17.

DOI:10.1088/0953-8984/22/14/145401
PMID:21389528
Abstract

Defects are believed to play a fundamental role in the supersolid state of (4)He. We have studied solid (4)He in two dimensions (2D) as a function of the number of vacancies n(v), up to 30, inserted in the initial configuration at ρ=0.0765 Å( - 2), close to the melting density, with the exact zero-temperature shadow path integral ground state method. The crystalline order is found to be stable also in the presence of many vacancies and we observe two completely different regimes. For small n(v), up to about 6, vacancies form a bound state and cause a decrease of the crystalline order. At larger n(v), the formation energy of an extra vacancy at fixed density decreases by one order of magnitude to about 0.6 K. It is no longer possible to recognize vacancies in the equilibrated state because they mainly transform into quantum dislocations and crystalline order is found almost independently of how many vacancies have been inserted in the initial configuration. The one-body density matrix in this latter regime shows a non-decaying large distance tail: dislocations, that in 2D are point defects, turn out to be mobile, their number is fluctuating, and they are able to induce exchanges of particles across the system mainly triggered by the dislocation cores. These results indicate that the notion of the incommensurate versus the commensurate state loses meaning for solid (4)He in 2D, because the number of lattice sites becomes ill defined when the system is not commensurate. Crystalline order is found to be stable also in 3D in the presence of up to 100 vacancies.

摘要

缺陷被认为在 (4)He 的超固态中起着基本作用。我们研究了二维(2D)中固体 (4)He 的情况,作为初始配置中插入的空位数 n(v)的函数,直到 30,插入初始配置中的密度 ρ=0.0765 Å( - 2),接近熔化密度,使用精确的零温阴影路径积分基态方法。我们发现,即使存在许多空位,晶体有序也很稳定,并且观察到两种完全不同的状态。对于小的 n(v),约为 6,空位形成束缚态并导致晶体有序度降低。对于较大的 n(v),在固定密度下形成额外空位的形成能降低一个数量级,约为 0.6 K。在平衡状态下,已经不可能识别空位,因为它们主要转化为量子位错,并且晶体有序度几乎独立于在初始配置中插入了多少空位。在后一种状态下,单粒子密度矩阵显示出非衰减的大距离尾部:在 2D 中是点缺陷的位错是可移动的,其数量是波动的,并且它们能够诱导粒子在系统中跨越交换,主要是由位错核心触发的。这些结果表明,对于二维 (4)He,不对应态与对应态的概念失去了意义,因为当系统不对应时,晶格点的数量变得不明确。在存在多达 100 个空位的情况下,三维中也发现晶体有序是稳定的。

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