新型高温改性 CeTiGe：结构特征与物理性能。
New high temperature modification of CeTiGe: structural characterization and physical properties.
机构信息
CNRS, Université de Bordeaux, ICMCB, 87 avenue du Docteur Albert Schweitzer, 33608 Pessac Cedex, France.
出版信息
J Phys Condens Matter. 2010 Apr 14;22(14):146003. doi: 10.1088/0953-8984/22/14/146003. Epub 2010 Mar 17.
The new high temperature form (HT) of the ternary germanide CeTiGe was prepared by annealing at 1373 K. The investigation of HT-CeTiGe by x-ray powder diffraction shows that the compound crystallizes in the tetragonal CeScSi type structure (space group I4/mmm; a=414.95(2) and c=1590.85(10) pm as unit cell parameters). Electrical resistivity, thermoelectric power, magnetization and specific heat measurements performed down to 2 K on HT-CeTiGe reveal a non-magnetic strongly correlated electron system; the specific heat divided by temperature attains a value of 0.635 J mol(-1) K(-2) at 2 K. The comparison of the physical properties of the two crystallographic modifications of CeTiGe suggests a decrease of the hybridization J(cf) between 4f(Ce) and conduction electrons in the sequence LT-CeTiGe [Formula: see text]-CeTiGe (CeScSi type).
新的三元锗化物 CeTiGe 的高温形式 (HT) 通过在 1373 K 退火制备得到。通过 X 射线粉末衍射对 HT-CeTiGe 的研究表明，该化合物结晶为四方 CeScSi 型结构（空间群 I4/mmm；晶胞参数为 a=414.95(2) 和 c=1590.85(10) pm）。在 2 K 以下对 HT-CeTiGe 进行的电阻率、热电势、磁化和比热测量表明，它是一个非磁性强关联电子系统；在 2 K 时，比热除以温度达到 0.635 J mol(-1) K(-2)。CeTiGe 的两种晶型的物理性质的比较表明，4f(Ce) 和导带电子之间的杂化 J(cf) 在 LT-CeTiGe [Formula: see text]-CeTiGe（CeScSi 型）的序列中减小。
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