Ritter C, Provino A, Manfrinetti P, Pathak A K
Institut Laue-Langevin, BP 156, 38042 Grenoble, France.
J Phys Condens Matter. 2017 Feb 1;29(4):045802. doi: 10.1088/1361-648X/29/4/045802. Epub 2016 Nov 24.
An investigation on the ground state magnetism of CeScSi, CeScGe (tetragonal CeScSi-type, tI12, space group I4/mmm) by temperature-dependent powder neutron diffraction has been carried out, as debated and controversial data regarding the low temperature magnetic behaviours of these two compounds were reported. Our studies reveal that, while cooling, long-range magnetic ordering in CeScSi and CeScGe takes place by a two-step process. A first transition leads to a magnetic structure with the Ce moments aligned ferromagnetically onto two neighbouring tetragonal basal a-b planes of the CeScSi-type structure; the double layers are then antiferromagnetically coupled to each other along the c-axis. The transition temperature associated with the first ordering is T ~ 26 K and T ~ 48 K for the silicide and the germanide, respectively. Here the spin directions are rigorously confined to the basal plane, with values of the Ce magnetic moments of μ = 0.8-1.0 μ . A second magnetic transition, which takes place at slightly lower temperatures, results in a canting of the ordered magnetic moments out of the basal plane which is accompanied by an increase of the magnetic moment value of Ce to μ = 1.4-1.5 μ . Interestingly, the second magnetic transition leads to a structural distortion in both compounds from the higher-symmetry tetragonal space group I4/mmm to the lower-symmetry and triclinic I-1 (non-standard triclinic). Magnetic symmetry analysis shows that the canted structure would not be allowed in the I4/mmm space group; this result further confirms the structural transition. The transition temperatures T from I4/mmm to I-1 are about 22 K in CeScSi and 36 K in CeScGe, i.e. well below the temperature of the first onset of antiferromagnetic order observed in this work (or below the ordering temperature, previously reported as either T or T ). This result, along with the synchronism of the magnetic and structural transitions, suggests a magnetostructural origin of this structural distortion. We have also carried out powder neutron diffraction for LaScSi as a non-magnetically-ordering reference compound and compared the results with those of CeScSi and CeScGe compounds.
通过变温粉末中子衍射对CeScSi、CeScGe(四方CeScSi型,tI12,空间群I4/mmm)的基态磁性进行了研究,因为此前报道了关于这两种化合物低温磁行为的存在争议的数据。我们的研究表明,在冷却过程中,CeScSi和CeScGe中的长程磁有序通过两步过程发生。第一次转变导致形成一种磁结构,其中Ce磁矩铁磁排列在CeScSi型结构的两个相邻四方基面a - b平面上;然后双层沿c轴反铁磁耦合。与第一次有序化相关的转变温度,硅化物为T26 K,锗化物为T48 K。这里自旋方向严格限制在基面内,Ce磁矩值为μ = 0.8 - 1.0 μ。第二次磁转变发生在稍低温度下,导致有序磁矩从基面倾斜,同时Ce磁矩值增加到μ = 1.4 - 1.5 μ。有趣的是,第二次磁转变导致两种化合物都从高对称的四方空间群I4/mmm转变为低对称的三斜I - 1(非标准三斜)结构畸变。磁对称性分析表明,在I4/mmm空间群中不允许倾斜结构;这一结果进一步证实了结构转变。从I4/mmm到I - 1的转变温度T,在CeScSi中约为22 K,在CeScGe中约为36 K,即远低于本工作中观察到的反铁磁序首次出现的温度(或低于先前报道的有序温度,记为T或T)。这一结果以及磁转变和结构转变的同步性,表明这种结构畸变源于磁结构。我们还对作为非磁有序参考化合物的LaScSi进行了粉末中子衍射,并将结果与CeScSi和CeScGe化合物的结果进行了比较。