Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum & Minerals, Dhahran, Saudi Arabia.
J Environ Sci Health A Tox Hazard Subst Environ Eng. 2011;46(4):415-9. doi: 10.1080/02773813.2010.542399.
Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.
采用金属有机化学气相沉积（MOCVD）法在 c 面蓝宝石衬底上制备并生长了 GaN 单晶薄膜，然后通过高分辨率 X 射线衍射（HR-XRD）和光致发光（PL）测量对其进行了表征。在 355nm 脉冲紫外激光辐照下，研究了 GaN 薄膜上 Sulforhodamine B（SRB）分子的光催化分解。结果表明，生长的 GaN 薄膜对 SRB 分子表现出高效的降解，并且在紫外脉冲激光照射下表现出优异的光催化稳定性。
