Coulomb explosion sputtering of selectively oxidized Si.

We have studied the sputtering of a unique system comprising of coexisting silicon and silicon oxide surfaces due to the impact of multiply charged Ar(q+) ions. Such surfaces are produced by oblique angle oxygen ion bombardment on Si(100), which results in one side oxidized ripple formation due to preferential oxygen implantation. It is observed by atomic force microscopy and conducting atomic force microscopy studies that the higher the potential energy of the Ar(q+) ion, the higher the sputtering yield of the nonconducting (oxide) side of the ripple as compared to the semiconducting side while ensuring an identical irradiation and measurement condition. It also shows experimentally the potential of highly charged ions in the gentle cleaning or tailoring of nanostructures. The results are explained in terms of the Coulomb explosion model, where potential sputtering depends on the conductivity of the ion impact sites.