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孤立施主电子在磷掺杂硅中的高频电子自旋共振的自旋动力学。

Spin dynamics of isolated donor electrons in phosphorus-doped silicon from high-frequency electron spin resonance.

机构信息

Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea.

出版信息

J Phys Condens Matter. 2010 May 26;22(20):206001. doi: 10.1088/0953-8984/22/20/206001. Epub 2010 Apr 26.

DOI:10.1088/0953-8984/22/20/206001
PMID:21393712
Abstract

We present the spin dynamics of isolated donor electrons in phosphorus-doped silicon at low temperature and in a high magnetic field. We performed a steady-state electron spin resonance (ESR) on the sample with a dopant concentration of 6.5 × 10(16) cm(- 3) in a high field of 2.87 T (80 GHz) and at temperatures from 48 down to 1.8 K. As the temperature decreases below 16 K, the resonance spectral line changes from the usual derivative form characteristic of absorptions. Very long spin-lattice relaxation time T(1) at low temperature gives rise to rapid passage effects and results in a dramatic change in the line shape and intensity as a function of temperature. We show that the numerical analysis based on the passage effects well explains the observed spectral changes with temperature. The spin-lattice relaxation time T(1) is derived by numerical fit to the experimental data. We discuss the dynamic nuclear polarization of (31)P nuclear spins which shows up as asymmetric intensities of the hyperfine-split ESR resonance lines.

摘要

我们展示了在低温和强磁场下,磷掺杂硅中孤立施主电子的自旋动力学。我们在掺杂浓度为 6.5×10(16)cm(-3)的样品上进行了稳态电子自旋共振(ESR)实验,磁场强度为 2.87 T(80 GHz),温度范围从 48 降至 1.8 K。当温度低于 16 K 时,共振谱线从通常的导数形式转变为吸收特征。低温下非常长的自旋晶格弛豫时间 T(1)导致了快速通过效应,并导致线形状和强度随温度的急剧变化。我们表明,基于通过效应的数值分析很好地解释了观察到的随温度变化的光谱变化。自旋晶格弛豫时间 T(1)是通过对实验数据的数值拟合得到的。我们讨论了(31)P 核自旋的动态核极化,这表现为超精细分裂 ESR 共振线的不对称强度。

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