Department of Physics, Isfahan University of Technology, Isfahan, Iran.
J Phys Condens Matter. 2010 Jun 30;22(25):255503. doi: 10.1088/0953-8984/22/25/255503. Epub 2010 Jun 7.
Employing the kernel polynomial method (KPM), we study the electronic properties of the graphene bilayers with Bernal stacking in the presence of diagonal disorder, within the tight-binding approximation and nearest neighbor interactions. The KPM method enables us to calculate local density of states (LDOS) without the need to exactly diagonalize the Hamiltonian. We use the geometrical averaging of the LDOS at different lattice sites as a criterion to distinguish the localized states from extended ones. We find that this model undergoes an Anderson metal-insulator transition at a critical value of disorder strength.
利用核多项式方法（KPM），我们在紧束缚近似和最近邻相互作用下，对角无序存在的情况下，研究了具有伯纳尔堆积的双层石墨烯的电子性质。KPM 方法使我们能够在不需要精确对角化哈密顿量的情况下计算局域态密度（LDOS）。我们使用不同格点处 LDOS 的几何平均作为区分局域态和扩展态的标准。我们发现，在无序强度的临界值处，该模型经历了安德森金属-绝缘体转变。
