Device & Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan.
Ultramicroscopy. 2011 Apr;111(5):303-8. doi: 10.1016/j.ultramic.2011.01.005. Epub 2011 Jan 13.
We analyzed a Si/SiO(2) interface using multivariate analysis and spherical aberration-corrected scanning transmission electron microscopy-electron energy loss spectroscopy which is characterized by using the electron energy loss spectrum of the low-loss region. We extracted the low-loss spectra of Si, SiO(2) and an interface state. Even if the interface is formed from materials with different dielectric functions, the present method will prove suitable for obtaining a more quantitative understanding of the dielectric characteristic.
我们使用多元分析和球差校正扫描透射电子显微镜-电子能量损失光谱学分析了 Si/SiO(2) 界面，其特点是使用低损耗区域的电子能量损失谱。我们提取了 Si、SiO(2) 和界面态的低损耗谱。即使界面是由具有不同介电函数的材料形成的，本方法也将证明适合于获得对介电特性的更定量的理解。
