School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW, Australia.
J Phys Condens Matter. 2010 Jul 28;22(29):296004. doi: 10.1088/0953-8984/22/29/296004. Epub 2010 Jun 29.
The roles of codoping ions (Li, Ga and Cu) and defects (oxygen vacancy and hydrogen impurity) in magnetic interactions in ZnO:Co systems have been studied systematically using an ab initio method with density functional theory and the standard molecular field model. The results show that where defects are not included in ZnO's lattice carrier mediated magnetism is only achievable in shallow p-type codoping, such as ZnO:Co + Cu. However, in deep p-type codoping (ZnO:Co + Li) and deep n-type codoping (ZnO:Co + Ga), the carriers generally do not induce spontaneous magnetism. It was also found that the oxygen vacancy, due to its deep donor nature, has a minor favoring effect on ferromagnetic ordering among Co ions. The observed ferromagnetism in such systems can be attributed to the interaction of Co ions with unintentional hydrogen contamination rather than codopants or oxygen vacancies.
系统地使用基于密度泛函理论和标准分子场模型的从头计算方法研究了共掺杂离子(Li、Ga 和 Cu)和缺陷(氧空位和氢杂质)在 ZnO:Co 体系中磁相互作用中的作用。结果表明,在不包含缺陷的情况下,载流子介导的磁性仅在浅 p 型共掺杂(如 ZnO:Co + Cu)中才能实现。然而,在深 p 型共掺杂(ZnO:Co + Li)和深 n 型共掺杂(ZnO:Co + Ga)中,载流子通常不会引起自发磁化。还发现,氧空位由于其深施主性质,对 Co 离子之间的铁磁有序有较小的促进作用。在这些体系中观察到的铁磁性可以归因于 Co 离子与非故意氢污染的相互作用,而不是共掺杂剂或氧空位。