College of Physics, Hebei Normal University, Shijiazhuang 050016, People's Republic of China.
J Phys Condens Matter. 2010 Aug 11;22(31):315304. doi: 10.1088/0953-8984/22/31/315304. Epub 2010 Jul 16.
We study the band and transport features of zigzag graphene nanoribbon with an antidot lattice. It is found that an antidot lattice could turn semi-metal graphene into a semiconductor. The size of the band gap can be tuned by the position of the antidots and the distance D between the two nearest antidots. For a finite superlattice with N antidots and a large D, a group of (N - 1) splitting resonant peaks and transmission-blockade regions appear alternately in the conductance spectrum. This indicates the formation of minibands and minigaps. In addition, Fano resonances can be observed when the antidots are localized near one edge of the nanoribbon. These features provide potential applications for graphene-based electronic and optoelectronic devices.
我们研究了具有缺陷格点的锯齿型石墨烯纳米带的能带和输运性质。研究发现，缺陷格点可以将半金属石墨烯转变为半导体。通过改变缺陷的位置和两个最近缺陷之间的距离 D，可以调节带隙的大小。对于具有 N 个缺陷和较大 D 的有限超晶格，在电导谱中会交替出现（N - 1）组分裂共振峰和传输阻塞区域。这表明形成了能带和能隙。此外，当缺陷局域在纳米带的一个边缘附近时，可以观察到 Fano 共振。这些特性为基于石墨烯的电子和光电子器件提供了潜在的应用。
