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基于石墨烯的双势垒纳米结构的电导。

Conductance of graphene-based double-barrier nanostructures.

机构信息

Department of Campus of Bijar, University of Kurdistan, Bijar, Iran.

出版信息

J Phys Condens Matter. 2010 Dec 22;22(50):505504. doi: 10.1088/0953-8984/22/50/505504. Epub 2010 Nov 30.

DOI:10.1088/0953-8984/22/50/505504
PMID:21406801
Abstract

The effect of a mass gap on the conductance of graphene double-barrier heterojunctions is studied. By obtaining the 2D expression for the electronic transport of the low energy excitations of pure graphene through double-barrier systems, it is found that the conductivity of these structures does not depend on the type of charge carriers in the zones of the electric field. However, a finite induced gap in the graphene spectrum makes conductivity dependent on the energy band index. We also discuss a few controversies concerning double-barrier systems stemming from an improper choice of the scattering angle. Then it is observed that, for some special values of the incident energy and potential's height, graphene junctions behave like left-handed materials, resulting in a maximum value for the conductivity.

摘要

研究了质量间隙对石墨烯双势垒异质结电导率的影响。通过获得通过双势垒系统的纯石墨烯低能激发的二维电子输运表达式,发现这些结构的电导率不取决于电场区域中载流子的类型。然而,石墨烯谱中的有限诱导能隙使得电导率依赖于能带指数。我们还讨论了由于散射角选择不当而引起的双势垒系统中的一些争议。然后观察到,对于入射能量和势阱高度的某些特殊值,石墨烯结表现得像左手材料,从而导致电导率的最大值。

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