Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China.
J Am Chem Soc. 2011 Apr 13;133(14):5232-5. doi: 10.1021/ja2008278. Epub 2011 Mar 16.
Semiconducting single-walled carbon nanotubes (s-SWCNTs) with a mean diameter of 1.6 nm were synthesized on a large scale by using oxygen-assisted floating catalyst chemical vapor deposition. The oxygen introduced can selectively etch metallic SWCNTs in situ, while the sulfur growth promoter functions in promoting the growth of SWCNTs with a large diameter. The electronic properties of the SWCNTs were characterized by laser Raman spectroscopy, absorption spectroscopy, and field effect transistor measurements. It was found that the content of s-SWCNTs in the samples was highly sensitive to the amount of oxygen introduced. Under optimum synthesis conditions, enriched s-SWCNTs can be obtained in milligram quantities per batch.
半导体单壁碳纳米管(s-SWCNTs)的平均直径为 1.6nm,是通过使用氧辅助浮动催化剂化学气相沉积法大规模合成的。引入的氧可以原位选择性地刻蚀金属 SWCNTs,而硫生长促进剂的作用则是促进大直径 SWCNTs 的生长。通过激光拉曼光谱、吸收光谱和场效应晶体管测量对 SWCNTs 的电子性质进行了表征。结果发现,样品中 s-SWCNTs 的含量对引入氧的量非常敏感。在最佳的合成条件下,每批可以毫克量级的量获得富集的 s-SWCNTs。