Xie Piao, Sun Yun, Chen Chao, Guo Shu-Yu, Zhao Yiming, Jiao Xinyu, Hou Peng-Xiang, Liu Chang, Cheng Hui-Ming
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
Nanomaterials (Basel). 2023 Jul 4;13(13):2001. doi: 10.3390/nano13132001.
Semiconducting single-walled carbon nanotubes (s-SWCNTs) with large diameters are highly desired in the construction of high performance optoelectronic devices. However, it is difficult to selectively prepare large-diameter s-SWCNTs since their structure and chemical stability are quite similar with their metallic counterparts. In this work, we use SWCNTs with large diameter as a raw material, conjugated polymer of regioregular poly-(3-dodecylthiophene) (rr-P3DDT) with long side chain as a wrapping agent to selectively separate large-diameter s-SWCNTs. It is found that s-SWCNTs with a diameter of ~1.9 nm are effectively enriched, which shows a clean surface. By using the sorted s-SWCNTs as a channel material, we constructed thin-film transistors showing charge-carrier mobilities higher than 10 cm V s and on/off ratios higher than 10.
在高性能光电器件的构建中，非常需要大直径的半导体单壁碳纳米管（s-SWCNTs）。然而，由于大直径s-SWCNTs的结构和化学稳定性与金属型碳纳米管非常相似，因此难以选择性地制备大直径s-SWCNTs。在这项工作中，我们使用大直径的SWCNTs作为原料，以具有长侧链的区域规整聚（3-十二烷基噻吩）（rr-P3DDT）共轭聚合物作为包裹剂，以选择性地分离大直径s-SWCNTs。结果发现，直径约为1.9 nm的s-SWCNTs被有效地富集，其表面干净。通过使用分选后的s-SWCNTs作为沟道材料，我们构建了电荷载流子迁移率高于10 cm² V⁻¹ s⁻¹且开/关比高于10的薄膜晶体管。
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